Laser Integration with CMOS Assembly Process for Si Photonics

被引:0
|
作者
Tseng, Ricky [1 ]
O'Callaghan, James [2 ]
Eid, Feras [1 ]
Gleeson, Michael [2 ]
Rawlings, Brandon [1 ]
Kobrinsky, Mauro [1 ]
Ban, Ibrahim [1 ]
Nagle, Roger [3 ]
McFarlane, William [1 ]
Corbett, Brian [2 ]
Chang, Peter [1 ]
机构
[1] Intel, Components Res, Technol Mfg Grp, Cork, Ireland
[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[3] Intel, Ireland Res, Cork, Ireland
来源
2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2014年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High performance laser is integrated on Si substrates with evanescently coupled polymer waveguides. The design allows 2 mu m misalignment, consistent with CMOS assembly. 4 mu m gap and 8dB loss were demonstrated with improvement paths to <2dB loss.
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收藏
页数:3
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