Laser Integration with CMOS Assembly Process for Si Photonics

被引：0

作者：

Tseng, Ricky ^{[1
]}

O'Callaghan, James ^{[2
]}

Eid, Feras ^{[1
]}

Gleeson, Michael ^{[2
]}

Rawlings, Brandon ^{[1
]}

Kobrinsky, Mauro ^{[1
]}

Ban, Ibrahim ^{[1
]}

Nagle, Roger ^{[3
]}

McFarlane, William ^{[1
]}

Corbett, Brian ^{[2
]}

Chang, Peter ^{[1
]}

机构：

[1] Intel, Components Res, Technol Mfg Grp, Cork, Ireland

[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[3] Intel, Ireland Res, Cork, Ireland

来源：

2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance laser is integrated on Si substrates with evanescently coupled polymer waveguides. The design allows 2 mu m misalignment, consistent with CMOS assembly. 4 mu m gap and 8dB loss were demonstrated with improvement paths to <2dB loss.

引用

页数：3

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