Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

被引:13
|
作者
Liu, J [1 ]
Wang, YG
Yang, JM
He, JL
Ma, XY
机构
[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100022, Peoples R China
关键词
LT-GaAs; Nd : YVO4; QML;
D O I
10.1016/j.optcom.2005.12.024
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 mu J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:332 / 335
页数:4
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