Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal

被引：5
|
作者：
Klein, B. [1 ]
Montoya, J. [1 ]
Gautam, N. [1 ]
Krishna, S. [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2013年 / 111卷 / 02期
关键词：
III-V semiconductors;
D O I：
10.1007/s00339-012-7293-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper reports the use of an InAs/GaSb strained layer superlattice (SLS) as an etch stop layer for GaSb substrate removal with a BCl3/SF6 etch chemistry. Optimum chamber conditions were determined by measuring etch rates and selectivities for two types of superlattices. It was found that selectivity of GaSb over a superlattice is maximized if the reactive ion etching (RIE) chamber pressure is maximized and BCl3 is 80 % of the gas mixture. Selectivities of up to about 475 were measured. Greater selectivity was achieved with superlattices composed of thicker InAs layers.
引用
收藏
页码：671 / 674
页数：4
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