HYDROGENATED AMORPHOUS SILICON CARBON NITRIDE FILMS PREPARED BY PECVD TECHNOLOGY: PROPERTIES

被引：21

作者：

Huran, Jozef ^{[1
]}

Valovic, Albin ^{[1
]}

Kucera, Michal ^{[1
]}

Kleinova, Angela ^{[2
]}

Kovacova, Eva ^{[1
]}

Bohacek, Pavol ^{[1
]}

Sekacova, Maria ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

[2] Slovak Acad Sci, Inst Polymer, Bratislava 84541, Slovakia

来源：

JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS | 2012年 / 63卷 / 05期

关键词：

hydrogenated amorphous silicon carbon nitride; PECVD; THIN-FILMS; C-N; DEPOSITION;

D O I：

10.2478/v10187-012-0049-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated amorphous silicon carbon nitride films were grown by plasma enhanced chemical vapor deposition (PECVD) technique. The flow rates of SiH4, CH4 and NH3 gases were 6 sccm, 30 sccm and 8 sccm, respectively. The deposition temperatures were 350, 400 and 450 degrees C. The RBS and ERD results showed that the concentrations of Si, C, N and FT are practically the same in the films deposited at substrate temperatures in the range 350-450 degrees C. In photoluminescence spectra we identified two peaks and assigned them to radiative transitions typical for amorphous materials, ie band to band and defect-related ones. The electrical characterization consists of I(V) measurement in sandwich configuration for voltages up to 100 V. From electrical characterization, it was found that with increased deposition temperature the resistivity of the amorphous SiCN film was reduced.

引用

页码：333 / 335

页数：3

共 50 条

[31] Optical properties of amorphous silicon nitride thin-films prepared by VHF-PECVD using silane and nitrogen
Tan, Wee Chong
Kobayashi, S.
Aoki, T.
Johanson, Robert E.
Kasap, S. O.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 : 15 - 18
[32] Influence of power and film thickness on the properties of Rf PECVD hydrogenated amorphous carbon films
Awang, Rozidawati
Rahman, Saadah A.
SOLID STATE SCIENCE AND TECHNOLOGY, 2007, 909 : 133 - +
[33] Aging- and thermal-annealing effects on the vibrational- and microstructural-properties of PECVD grown hydrogenated amorphous silicon carbon nitride thin films
Rahman, Mohd Azam Abdul
Goh, Boon Tong
Chiu, Wee Siong
Haw, Choon Yian
Mahmood, Mohamad Rusop
Khiew, Poi Sim
Rahman, Saadah Abdul
VIBRATIONAL SPECTROSCOPY, 2018, 94 : 22 - 30
[34] PROPERTIES OF HYDROGENATED AND FLUORINATED AMORPHOUS SILICON-CARBON ALLOY FILMS PREPARED BY MAGNETRON SPUTTERING.
Saito, N.
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1987, 55 (05): : 615 - 625
[35] PROPERTIES OF HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON CARBON ALLOY-FILMS PREPARED BY MAGNETRON SPUTTERING
SAITO, N
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (05): : 615 - 625
[36] Study on technology for the silicon nitride thin films by PECVD
Department of Electronic Information Engineering, Suzhou Vocational University, Suzhou 215104, China
不详
不详
Gongneng Cailiao, 2007, 5 (703-705+710):
[37] Study on the stress of silicon nitride thin films prepared by PECVD
Yu, Y
Luo, ZZ
Weng, XQ
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2004, 5774 : 212 - 215
[38] Effect of plasma power on properties of hydrogenated amorphous silicon carbide hardmask films deposited by PECVD
Kwon, Sungyool
Park, Yoonsoo
Ban, Wonjin
Youn, Chulmin
Lee, Sungwoo
Yang, Jaeyoung
Jung, Donggen
Choi, Taekjib
VACUUM, 2020, 174
[39] RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films
Chen, Enlong
Du, Guoping
Zhang, Yu
Qin, Xiaomei
Lai, Hongmei
Shi, Wangzhou
CERAMICS INTERNATIONAL, 2014, 40 (07) : 9791 - 9797
[40] PHYSICAL-PROPERTIES OF AMORPHOUS HYDROGENATED SILICON FILMS PREPARED BY MAGNETRON SPUTTERING
SVANBAEV, EA
ZHDANOVICH, NS
ZHERZDEV, AV
TAURBAEV, TM
TERUKOV, EI
INORGANIC MATERIALS, 1987, 23 (05) : 635 - 639

← 1 2 3 4 5 →