Electronic-structure study of Ni3Al, Ni3Ga, Ni3In, and NiGa using X-ray photoemission spectroscopy and Bremsstrahlung isochromat spectroscopy

被引：16

作者：

Hsu, LS ^{[1
]}

Gweon, GH

Allen, JW

机构：

[1] Natl Chang Hua Univ Educ, Dept Phys, Changhua 50058, Taiwan

[2] Univ Michigan, Randall Lab Phys, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1999年 / 60卷 / 10期

基金：

美国国家科学基金会;

关键词：

intermetallic compounds; photoelectron spectroscopy; electronic structure;

D O I：

10.1016/S0022-3697(99)00196-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa were studied by high-resolution X-ray photoemission spectroscopy (XPS) and Bremsstrahlung isochromat spectroscopy (BIS). The XPS valence-band and BIS spectra of Ni3Al and Ni3Ga agree well with available density-of-states (DOS) curves derived from band-structure calculations. The asymmetry index of the Ni 2p core levels decreases in the series Ni3Al, Ni3In, Ni3Ga, and NiGa. This observation implies that the density of states at the Fermi level and the number of Ni 3d holes per Ni atom both decrease in the series. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1627 / 1631

页数：5

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