High-Frequency Multiplier Based on GaN Planar Schottky Barrier Diodes

被引：0

作者：

Feng, Z. H. ^{[1
]}

Liang, S. X. ^{[1
]}

Xing, D. ^{[1
]}

Wang, J. L. ^{[1
]}

Yang, D. B. ^{[1
]}

Fang, Y. L. ^{[1
]}

Zhang, L. S. ^{[1
]}

Zhao, X. Y. ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China

来源：

2016 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2016年

关键词：

GaN planar Schottky barrier diode; Cut-off frequency; Breakdown voltage; Terahertz; Tripier;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report GaN planar Schottky barrier diodes (SBDs) with the DC and RF performance. The air-bridge structure is adopted to reduce the parasitic parameters. The cut-off frequency (fc) of the diode with an anode diameter of 5 mu m is calculated to be 655 GHz at zero bias. By using four anodes series GaN SBDs chip, a frequency tripler with a peak output power of 2.1 mW at 103.5 GHz is demonstrated for the first time.

引用

页数：3

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