Analysis of the efficiency of intermediate band solar cells based on quantum dot supercrystals

被引：1
|
作者：
Heshmati, S. [1 ]
Golmohammadi, S. [2 ]
Abedi, K. [3 ]
Taleb, H. [3 ]
机构：
[1] Islamic Azad Univ, Dept Engn, Buin Branch, Tehran, Iran
[2] Univ Tabriz, Sch Engn Emerging Technol, Nanophoton Grp, Tabriz 5166614761, Iran
[3] Shahid Beheshti Univ, Fac Elect & Comp Engn, Dept Elect Engn, Tehran 1983963113, Iran
来源：
QUANTUM ELECTRONICS | 2014年 / 44卷 / 03期
关键词：
barrier width; efficiency; quantum-dot intermediate band solar cell; quantum dot conduction band offset; quantum-dot width;
D O I：
10.1070/QE2014v044n03ABEH014936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the influence of the quantum-dot (QD) width and the quantum-dot conduction band (QD-CB) offset on the efficiency of quantum-dot intermediate band solar cells (QD-IBSCs). Simulation results demonstrate that with increasing QD-CB offset and decreasing QD width, the maximum efficiency is achieved.
引用
收藏
页码：279 / 282
页数：4
相关论文
共 50 条
  • [41] ENERGY BAND STRUCTURE AND ABSORPTION COEFFICIENTS IN THE QUANTUM-DOT INTERMEDIATE BAND SOLAR CELLS
    Hu, W. G.
    Inoue, T.
    Kojima, O.
    Kita, T.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 1808 - 1813
  • [42] Photovoltaic efficiency of intermediate band solar cells based on CdTe/CdMnTe coupled quantum dots
    Prado, Silvio J.
    Marques, Gilmar E.
    Alcalde, Augusto M.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (44)
  • [43] Investigation of Some Parameters Which Affects Into The Efficiency of Quantum Dot Intermediate Band Solar Cell
    Abou El
    Aly, Maaty M.
    INTERNATIONAL JOURNAL OF RENEWABLE ENERGY RESEARCH, 2014, 4 (04): : 1085 - 1093
  • [44] Engineering band structure in nanoscale quantum-dot supercrystals
    Baimuratov, Anvar S.
    Rukhlenko, Ivan D.
    Fedorov, Anatoly V.
    OPTICS LETTERS, 2013, 38 (13) : 2259 - 2261
  • [45] Improved quantum dot stacking for intermediate band solar cells using strain compensation
    Simmonds, Paul J.
    Sun, Meng
    Laghumavarapu, Ramesh Babu
    Liang, Baolai
    Norman, Andrew G.
    Luo, Jun-Wei
    Huffaker, Diana L.
    NANOTECHNOLOGY, 2014, 25 (44)
  • [46] AN EQUIVALENT CIRCUIT MODEL PROPOSED FOR THE INTERMEDIATE BAND NANOSTRUCTURED QUANTUM DOT SOLAR CELLS
    Houshmand, Mohammad
    Zandi, Mohammad H.
    Dehkordi, Somayeh S.
    Perez, Mauricio D.
    Gorji, Nima E.
    MODERN PHYSICS LETTERS B, 2012, 26 (21):
  • [47] The investigation of InGaAs quantum dot growth peculiarities for GaAs intermediate band solar cells
    Salii, R. A.
    Mintairov, S. A.
    Mintairov, M. A.
    Nadtochiy, A. M.
    Shvarts, M. Z.
    Kalyuzhnyy, N. A.
    INTERNATIONAL CONFERENCE PHYSICA.SPB/2017, 2018, 1038
  • [48] Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells
    Canovas, E.
    Marti, A.
    Lopez, N.
    Antolin, E.
    Linares, P. G.
    Farmer, C. D.
    Stanley, C. R.
    Luque, A.
    THIN SOLID FILMS, 2008, 516 (20) : 6943 - 6947
  • [49] Performance Comparison for Different Material Quantum Dot Single Intermediate Band Solar Cells
    Wei, Wensheng
    Shan, Feng
    Zhao, Shaoyun
    Zhang, Qiubo
    APPLIED MECHANICS AND MATERIALS II, PTS 1 AND 2, 2014, 477-478 : 404 - 411
  • [50] Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals
    Zhang, Qiubo
    Wei, Wensheng
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2013, 113 (01): : 75 - 82
12345