Considerations for further scaling of metal-insulator-metal DRAM capacitors

被引：12

作者：

Kaczer, B. ^{[1
]}

Clima, S. ^{[1
]}

Tomida, K. ^{[1
]}

Govoreanu, B. ^{[1
]}

Popovici, M. ^{[1
]}

Kim, M. -S. ^{[1
]}

Swerts, J. ^{[1
]}

Belmonte, A. ^{[1
]}

Wang, W. -C. ^{[2
]}

Afanas'ev, V. V. ^{[2
]}

Verhulst, A. S. ^{[1
]}

Pourtois, G. ^{[1
]}

Groeseneken, G. ^{[1
]}

Jurczak, M. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 01期

关键词：

ATOMIC LAYER DEPOSITION; THIN-FILMS;

D O I：

10.1116/1.4767125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effective electron tunneling mass m(tunnel) is extracted from trap-assisted leakage in Sr-rich strontium titanate and rutile titanium oxide films in metal-insulator-metal (MIM) capacitors and compared with theoretical values obtained from first principles calculations of the imaginary band structure. Optimum orientations of films and stoichiometry impacting m(tunnel) are also discussed. Because future vertical DRAM integration schemes also stipulate maximum thickness of the MIM capacitor, m(tunnel) is shown to be a critical parameter influencing intrinsic leakage and potentially limiting further scaling. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4767125]

引用

页数：5

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