A 30W, 46% PAE S-Band GaN HEMT MMIC Power Amplifier for Radar Applications

被引：0
|
作者：
Jardel, O. [1 ]
Olivier, M.
Lancereau, D. [1 ]
Aubry, R. [1 ]
Chartier, E. [1 ]
Sarazin, N. [1 ]
Poisson, M. -A. Di Forte [1 ]
Piotrowicz, S. [1 ]
Stanislawiak, M.
Rimbert, D.
Delage, S. L. [1 ]
Eudeline, P.
机构：
[1] III V Lab, Marcoussis, France
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
GaN HEMT; S-Band; Amplifier; pulse to pulse stability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with similar to 20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with similar to 20.5 dB power gain in the [2.9 - 3.5GHz] frequency band, in pulsed conditions (50 mu s/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.
引用
收藏
页码：639 / 642
页数：4
相关论文
共 50 条
  • [41] High Power S-band GaN-based Power Amplifier for Radar Systems
    Yang, Yuting
    Zhang, Mi
    Che, Wenquan
    Chen, Haidong
    Cai, Qi
    2015 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), 2015, : 77 - 79
  • [42] S-band GaN PolHEMT Power Amplifier
    Goralczyk, Marcin
    Gryglewski, Daniel
    2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), 2016,
  • [43] A Compact C-Band 50 W AlGaN/GaN High-Power MMIC Amplifier for Radar Applications
    Jeong, Jin-Cheol
    Jang, Dong-Pil
    Han, Byoung-Gon
    Yom, In-Bok
    ETRI JOURNAL, 2014, 36 (03) : 498 - 501
  • [44] 40 dBm AlGaN/GaN HEMT Power Amplifier MMIC for SatCom Applications at K-Band
    Friesicke, C.
    Feuerschuetz, P.
    Quay, R.
    Ambacher, O.
    Jacob, A. F.
    2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
  • [45] An Efficient AlGaN/GaN HEMT Power Amplifier MMIC at K-Band
    Friesicke, C.
    Kuehn, J.
    Brueckner, P.
    Quay, R.
    Jacob, A. F.
    2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2012, : 131 - 134
  • [46] GaN HEMT Based MMIC High Gain Low-Noise Amplifiers for S-Band Applications
    Tasci, Muhittin
    Sen, Ozlem
    Ozipek, Ulas
    Ozbay, Ekmel
    2019 IEEE 19TH MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS 2019), 2019,
  • [47] High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1.8W Output Power
    Xu, Peng
    Cheng, Zhiqun
    Zhang, ZhiWei
    Meng, MingWen
    2020 THE 5TH IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2020), 2020, : 130 - 133
  • [48] S-C Band Wideband GaN Power Amplifier MMIC for Radar Application
    Gong, Tingwei
    Cheng, Zhiqun
    Zheng, Bangjie
    Xuan, Xuefei
    Le, Chao
    Fan, Weihao
    Zhang, Zhiwei
    IEICE ELECTRONICS EXPRESS, 2024, 21 (24):
  • [49] GaN MMIC Power Amplifiers for S-Band and X-Band
    Suijker, Erwin M.
    Sudow, Mattias
    Fagerlind, Martin
    Rorsman, Niklas
    de Hek, A. P.
    van Vliet, F. E.
    2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2008, : 567 - +
  • [50] 10 W and 30W, 32-37 GHz, Ka-Band GaN MMIC Power Amplifiers on SiC
    Litchfield, Michael
    Dugas, Douglas
    2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2021,
12345