0.22THz Wideband Doubler Based on a Single-chip GaAs Monolithic Integration

被引:0
|
作者
Zhou, Hongji [1 ,2 ]
Zhang, Yaxin [1 ,2 ]
Liang, Shixiong [3 ]
Dong, Yazhou [1 ,2 ]
Kou, Wei [1 ,2 ]
Liu, Shu [1 ,2 ]
Zou, Lin [1 ,2 ]
机构
[1] Univ Elect Sci & Technol China, Yangtze Delta Reg Inst, Huzhou, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611730, Peoples R China
[3] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
D O I
10.1109/IRMMW-THz50927.2022.9895945
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We designed a terahertz wideband doubler with a frequency range of 200 GHz to 240 GHz. This frequency doubler uses six-anode Schottky diodes Integrated on a GaAs substrate. Based on the traditional balanced doubler circuit topology, a special input reduced height waveguide structure is adopted to make the input signal more easily absorbed by the diodes, thereby achieving high efficiency and wideband. The simulation results show that the efficiency is greater than 30% in the output frequency range of 200GHz-240GHz, pumped with 200mW, and the peak efficiency at 235GHz is 37%.
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页数:2
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