GaN-Based Single-Chip Power Integration Technology

被引：0
|
作者：
Zhou, Jinggui [1 ]
Chen, Kuangli [1 ]
Zhou, Qi [1 ]
Zhang, Bo [1 ]
机构：
[1] School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu,611731, China
来源：
Dianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of China | 2024年 / 53卷 / 05期
关键词：
Aluminum gallium nitride - Heterojunctions - High electron mobility transistors - Image storage tubes - Junction gate field effect transistors - Monolithic integrated circuits - Power HEMT - Power integrated circuits - Surface discharges;
D O I：
10.12178/1001-0548.2024225
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：685 / 697
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