High-power single-chip GaN-based white LED with 3058 lm (vol 52, pg 2050, 2016)

被引：0

作者：

Ding, Mingdi

Zhang, Yibin

Xu, Jianwei

Zhao, Desheng

Huang, Hongjuan

Xu, Xin

Miao, Zhenlin

He, Peng

Wang, Yanming

Dong, Yongjun

Zhang, Baoshun

Cai, Yong

机构：

[1] Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou

[2] Nano Science and Technology Institute, University of Science and Technology of China (USTC), Suzhou

[3] Xiangneng HuaLei Optoelectronic Co. Ltd., Chenzhou, Hunan

[4] Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai

[5] University of the Chinese Academy of Sciences, Beijing

来源：

ELECTRONICS LETTERS | 2016年 / 52卷 / 25期

关键词：

D O I：

10.1049/el.2016.4186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-power phosphor-converted white LED with 3058 lm is reported. The high-power white LED was manufactured by utilising a single-blue LED chip with a cerium-doped yttrium aluminium garnet phosphor crystal film, and the LED chip consists of 16 LED cells that are connected in series, the chip dimensions are of 4.5 x 4.5 mm(2). The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Results show that the luminous flux and luminous efficacy at 500 mA reach to 3058 lm and 128 lm/W, respectively.

引用

页码：2076 / 2076

页数：1

共 21 条

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