Electrodeposition of Te and Cu Thin Films on Boron Doped Diamond (BDD) Electrode

被引:1
|
作者
Fernandes, V. C. [1 ]
Matsushima, J. T.
Baldan, M. R.
Azevedo, A. F.
Linardi, M. [1 ]
Ferreira, N. G.
机构
[1] IPEN, CCCH, BR-05508000 Sao Carlos, SP, Brazil
关键词
DEPOSITION;
D O I
10.1149/1.3318520
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this paper boron-doped diamond (BDD) electrodes were prepared by hot filament chemical vapor deposition (CVD) technique using the standard mixture of H-2/CH4. The boron doping was obtained from H-2 forced to pass through a bubbler containing B2O3 dissolved in CH3OH. BDD quality and morphology were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The electrodeposition of Cu, Te and Cu-Te thin films on BDD electrodes was investigated. Thin films of these metals were deposited potentiostatically from an unstirred, deaerated aqueous solution on BDD and the deposits morphologies were characterized by SEM. Cyclic voltammetry was used to evaluate the electrochemical behavior of BDD electrodes in the deposition and dissolution processes of the Cu, Te and Cu-Te thin films.
引用
收藏
页码:209 / 214
页数:6
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