Design and performance of an InGaAs-InP single-photon avalanche diode detector

被引：129
|
作者：
Pellegrini, S [1 ]
Warburton, RE
Tan, LJJ
Ng, JS
Krysa, AB
Groom, K
David, JPR
Cova, S
Robertson, MJ
Buller, GS
机构：
[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[3] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 3-4期
基金：
英国工程与自然科学研究理事会;
关键词：
avalanche breakdown; avalanche photodiodes (APDs); photodetectors; photodiodes;
D O I：
10.1109/JQE.2006.871067
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 urn. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
引用
收藏
页码：397 / 403
页数：7
相关论文
共 50 条
  • [21] Growths and diffusions for InGaAs/InP single-photon avalanche diodes
    Acerbi, Fabio
    Tosi, Alberto
    Zappa, Franco
    SENSORS AND ACTUATORS A-PHYSICAL, 2013, 201 : 207 - 213
  • [22] Fast Active Quenching Circuit for Reducing Avalanche Charge and Afterpulsing in InGaAs/InP Single-Photon Avalanche Diode
    Acerbi, Fabio
    Della Frera, Adriano
    Tosi, Alberto
    Zappa, Franco
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2013, 49 (07) : 563 - 569
  • [23] Free-running, room temperature operation of an InGaAs/InP single-photon avalanche diode
    Warburton, Ryan E.
    Itzler, Mark
    Buller, Gerald S.
    APPLIED PHYSICS LETTERS, 2009, 94 (07)
  • [24] Kilometer-range depth imaging at 1550 nm wavelength using an InGaAs/InP single-photon avalanche diode detector
    McCarthy, Aongus
    Ren, Ximing
    Della Frera, Adriano
    Gemmell, Nathan R.
    Krichel, Nils J.
    Scarcella, Carmelo
    Ruggeri, Alessandro
    Tosi, Alberto
    Buller, Gerald S.
    OPTICS EXPRESS, 2013, 21 (19): : 22098 - 22113
  • [25] Active quenching circuit for a InGaAs single-photon avalanche diode
    郑丽霞
    吴金
    时龙兴
    奚水清
    刘斯扬
    孙伟锋
    Journal of Semiconductors, 2014, (04) : 155 - 160
  • [26] Active quenching circuit for a InGaAs single-photon avalanche diode
    Zheng Lixia
    Wu Jin
    Shi Longxing
    Xi Shuiqing
    Liu Siyang
    Sun Weifeng
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (04)
  • [27] Active quenching circuit for a InGaAs single-photon avalanche diode
    郑丽霞
    吴金
    时龙兴
    奚水清
    刘斯扬
    孙伟锋
    Journal of Semiconductors, 2014, 35 (04) : 155 - 160
  • [28] High crosstalk suppression in InGaAs/InP single-photon avalanche diode arrays by carrier extraction structure
    Tang, Yongsheng
    Wang, Rui
    Yang, Xiaohong
    He, Tingting
    Liu, Yijun
    Zhao, Meng
    NATURE COMMUNICATIONS, 2024, 15 (01)
  • [29] Characterization of an advanced harmonic subtraction single-photon detection system based on an InGaAs/InP avalanche diode
    Bienfang, Joshua C.
    Restelli, Alessandro
    ADVANCED PHOTON COUNTING TECHNIQUES X, 2016, 9858
  • [30] 2.5 GHz Gated InGaAs/InP Single-Photon Avalanche Diode with 44 ps Time Jitter
    He, De-Yong
    Wang, Shuang
    Chen, Jia-Lin
    Chen, Wei
    Yin, Zhen-Qiang
    Fan-Yuan, Guan-Jie
    Zhou, Zheng
    Guo, Guang-Can
    Han, Zheng-Fu
    Advanced Devices and Instrumentation, 2023, 4
12345