InPHBT digital ICs and MMICs in the 140-220 GHz band

被引：0

作者：

Rodwell, M ^{[1
]}

Griffith, Z ^{[1
]}

Paidi, V ^{[1
]}

Parthasarathy, N ^{[1
]}

Sheldon, C ^{[1
]}

Singisetti, U ^{[1
]}

Urteaga, M ^{[1
]}

Pierson, R ^{[1
]}

Rowell, P ^{[1
]}

Brar, B ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

来源：

IRMMW-THZ2005: THE JOINT 30TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 13TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Well-balanced InP HBTs now have similar to 450 GHz cutoff frequencies and similar to 4 V breakdown. With such devices, 150 GHz digital circuits (static dividers) and 175 GHz amplifiers have been demonstrated. We discuss device requirements (scaling laws and scaling limits) for realizing transistors and both digital and analog/RF circuits at sub-mm-wave frequencies; the most critical limitations are metal/semiconductor contact resistivities and dissipated power densities. Given present contact performance and thermal design, 200 GHz digital technologies and 300 GHz power amplifiers are now feasible and will soon be realized.

引用

页码：620 / 621

页数：2

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