Estimation of the ideality factor of ZnTe/CdTe p-p heterojunction diodes

被引：0
|
作者：
Alfaramawi, K. [1 ]
机构：
[1] Univ Alexandria, Fac Sci, Dept Phys, Alexandria, Egypt
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2008年 / 2卷 / 12期
关键词：
Heterojunction diode; Ideality factor; Interface states;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Direct analytical method for estimating the ideality factor of ZnTe/CdTe isotype p-p heterojunction diodes is reported. The calculations were performed at two temperatures 300 K and 200 K. Simulations, considering the series and shunt parasitics, showed ideality factor values of 6.9 and 22.4 at 300 K and 200 K respectively. These values were compared with those extracted from the dark current-voltage curves which are 6.5 and 28.2 at the same temperatures. The large ideality factor in this system (particularly at low temperature) was attributed to the presence of high density of interface states (typically similar to 10(13) cm(-2)).
引用
收藏
页码：763 / 765
页数：3
相关论文
共 50 条
  • [41] LUMINESCENT DIODE BASED ON A P-N ZNTE-CDSE HETEROJUNCTION
    VANYUKOV, AV
    KOVALEV, AN
    KONDAURO.NM
    SUPALOV, VA
    FEDOTOV, YA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1157 - &
  • [42] Current voltage characteristics of p-p isotype InGaAlP/GaAs heterojunction with a large valence-band discontinuity
    Itaya, Kazuhiko
    Ishikawa, Masayuki
    Hatakoshi, Gen-ichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (5 S): : 1919 - 1922
  • [43] MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAs
    Vasiliev, V. V.
    Remesnik, V. G.
    Dvoretsky, S. A.
    Varavin, V. S.
    Mikhailov, N. N.
    Sidorov, Yu. G.
    Suslyakov, A. O.
    Aseev, A. L.
    OPTICAL SENSING II, 2006, 6189
  • [44] OSCILLATIONS OF EM FORM-FACTOR AND P-P ELASTIC CROSS-SECTION
    CAMPANI, E
    FIORENTINI, G
    LETTERE AL NUOVO CIMENTO, 1973, 8 (11): : 675 - 680
  • [45] Degradation of the diode ideality factor of silicon n-p junctions
    El-Tahchi, M
    Khoury, A
    De Labardonnie, M
    Mialhe, P
    Pelanchon, F
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2000, 62 (04) : 393 - 398
  • [46] Influence of graded p-P heterojunction's potential barrier on characteristics of three-dimensional HgCdTe photodiode
    Vasilyev, VV
    Predein, AV
    18th International Conference on Photoelectronics and Night Vision Devices, 2005, 5834 : 83 - 91
  • [47] Interfacial electronic modulation of CoP-CoO p-p type heterojunction for enhancing oxygen evolution reaction
    Yao, Jing
    Zhang, Mingyi
    Ma, Xinzhi
    Xu, Lingling
    Gao, Feng
    Xiao, Junpeng
    Gao, Hong
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2022, 607 : 1343 - 1352
  • [48] Current Transport Mechanism in p-InSb-n-CdTe Heterojunction
    Petrosyan, S. G.
    Matevosyan, L. M.
    Avjyan, K. E.
    Nersesyan, S. R.
    JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2019, 54 (02) : 146 - 152
  • [49] RECOMBINATION RADIATION IN P-N JUNCTIONS OF CRYSTALS OF CDTE-ZNTE SYSTEM
    KOT, MV
    TSURKAN, AE
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (09): : 2304 - +
  • [50] Formation and properties of n-CdO/p-CdTe heterojunction
    Yu. Fedkovych Chernivtsy National University, 2 Kotsubynsky St., Chernivtsy, 58012, Ukraine
    Telecommun Radio Eng, 2008, 19 (1763-1768):
12345