The fractal dimension of boron-doped diamond films

被引：11
|
作者：
Silva, LLG
Ferreira, NG
Dotto, MER
Kleinke, MU
机构：
[1] Univ Estadual Campinas, NanoStruct & Interfaces Lab, DFA IFGW, BR-13081970 Campinas, SP, Brazil
[2] ITA CTA, Dept Quim, BR-12225800 Sao Jose Dos Campos, Brazil
[3] LAS INPE, BR-12201970 Sao Jose Dos Campos, Brazil
来源：
APPLIED SURFACE SCIENCE | 2001年 / 181卷 / 3-4期
基金：
巴西圣保罗研究基金会;
关键词：
boron-doped diamond films; AFM; cyclic voltammetry; fractal dimension;
D O I：
10.1016/S0169-4332(01)00429-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Boron-doped diamond films were grown by hot-filament-assisted chemical vapor deposition (CVD). The fractal dimension (FD) of these films was investigated by atomic force microscope and cyclic voltammetry. The scaling behavior is measured for peak current in cyclic voltammetry, height-height correlations and island size distribution in AFM images. Cyclic voltammetry experiments and the mass-radius (or island distribution) analysis have evidenced FD values lower than two suggesting non-contiguous chemically active sites. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：327 / 330
页数：4
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