Anisotropic surface roughness in molecular-beam epitaxy CdTe (211)B/Ge(211)

被引:2
|
作者
Badano, Giacomo [1 ]
Baudry, Xavier [1 ]
Ballet, Philippe [1 ]
Duvaut, Philippe [1 ]
Million, Alain [1 ]
Micoud, Eric [2 ]
Kaismoune, Sabeur [2 ]
Fougeres, Paul [2 ]
Mibord, Sophie [2 ]
Tran-Van, Pierre [3 ]
Etcheberry, Arnaud [3 ]
机构
[1] CEA LETI Minatec, F-38054 Grenoble 9, France
[2] Sofradir, Veurey Voroize, France
[3] Univ Versailles, IREM, F-78035 St Quentin en Yvelines, France
关键词
molecular-beam epitaxy; surface roughness; generalized ellipsometry; CdTe;
D O I
10.1007/s11664-008-0424-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We characterize the surface of molecular-beam epitaxy (MBE)-grown CdTe(211)B/Ge(211) by atomic-force microscopy (AFM), optical interference microscopy, and generalized ellipsometry (GE). We find that, for substrate temperatures above 300 degrees C, the surface is rough and hazy; the AFM root-mean-square roughness is of the order of 150 A. It appears from GE that the optical response is anisotropic, the principal axes of anisotropy being along the [(1) over bar 11] and [0 (1) over bar1] directions. For a substrate temperature of approximately 300 degrees C, the surface is smooth and mirror-like and the AFM roughness is as low as 45 A. The sample is still anisotropic, even though the magnitude of the cross-polarized reflection coefficients are very small in this case. It appears that the anisotropy originates from the surface roughness, not the bulk.
引用
收藏
页码:1369 / 1375
页数:7
相关论文
共 50 条
  • [41] Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy
    Aoki, T
    Chang, Y
    Badano, G
    Zhao, J
    Grein, C
    Sivananthan, S
    Smith, DJ
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (07) : 703 - 709
  • [42] Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy
    T. Aoki
    Y. Chang
    G. Badano
    J. Zhao
    C. Grein
    S. Sivananthan
    David J. Smith
    Journal of Electronic Materials, 2003, 32 : 703 - 709
  • [43] Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy
    Tari, S
    Brill, G
    Sivananthan, S
    Floyd, M
    Smith, DJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1562 - 1566
  • [44] Growth of PbSe on ZnTe/GaAs(211)B by molecular beam epitaxy
    Wang, X. J.
    Hou, Y. B.
    Chang, Y.
    Becker, C. R.
    Klie, R. F.
    Kodama, R.
    Aqariden, F.
    Sivananthan, S.
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (07) : 910 - 913
  • [45] Reciprocal space mapping study of CdTe epilayer grown by molecular beam epitaxy on (211)B GaAs substrate
    Polat, Mustafa
    Ari, Ozan
    Ozturk, Orhan
    Selamet, Yusuf
    MATERIALS RESEARCH EXPRESS, 2017, 4 (03):
  • [46] HgCdTe(211)B grown on CdTe(211)B/ZnTe(211)B/Si(211) by MBE
    Rujirawat, S
    Wijewarnasuriya, PS
    Chen, YP
    Aqariden, F
    Sivananthan, S
    INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 281 - 285
  • [47] Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy
    Yong Chang
    C.R. Becker
    C.H. Grein
    J. Zhao
    C. Fulk
    T. Casselman
    R. Kiran
    X.J. Wang
    E. Robinson
    S.Y. An
    S. Mallick
    S. Sivananthan
    T. Aoki
    C.Z. Wang
    D.J. Smith
    S. Velicu
    J. Zhao
    J. Crocco
    Y. Chen
    G. Brill
    P.S. Wijewarnasuriya
    N. Dhar
    R. Sporken
    V. Nathan
    Journal of Electronic Materials, 2008, 37 : 1171 - 1183
  • [48] Molecular beam epitaxial growth and structural properties of HgCdTe layers on CdTe(211)B/Si(211) substrates
    Yang, B
    Xin, Y
    Rujirawat, S
    Browning, ND
    Sivananthan, S
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) : 115 - 119
  • [50] Surface morphology and defect formation mechanisms for HgCdTe (211)B grown by molecular beam epitaxy
    Chang, Yong
    Becker, C. R.
    Grein, C. H.
    Zhao, J.
    Fulk, C.
    Casselman, T.
    Kiran, R.
    Wang, X. J.
    Robinson, E.
    An, S. Y.
    Mallick, S.
    Sivananthan, S.
    Aoki, T.
    Wang, C. Z.
    Smith, D. J.
    Velicu, S.
    Zhao, J.
    Crocco, J.
    Chen, Y.
    Brill, G.
    Wijewarnasuriya, P. S.
    Dhar, N.
    Sporken, R.
    Nathan, V.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (09) : 1171 - 1183