Anisotropic surface roughness in molecular-beam epitaxy CdTe (211)B/Ge(211)

被引:2
|
作者
Badano, Giacomo [1 ]
Baudry, Xavier [1 ]
Ballet, Philippe [1 ]
Duvaut, Philippe [1 ]
Million, Alain [1 ]
Micoud, Eric [2 ]
Kaismoune, Sabeur [2 ]
Fougeres, Paul [2 ]
Mibord, Sophie [2 ]
Tran-Van, Pierre [3 ]
Etcheberry, Arnaud [3 ]
机构
[1] CEA LETI Minatec, F-38054 Grenoble 9, France
[2] Sofradir, Veurey Voroize, France
[3] Univ Versailles, IREM, F-78035 St Quentin en Yvelines, France
关键词
molecular-beam epitaxy; surface roughness; generalized ellipsometry; CdTe;
D O I
10.1007/s11664-008-0424-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We characterize the surface of molecular-beam epitaxy (MBE)-grown CdTe(211)B/Ge(211) by atomic-force microscopy (AFM), optical interference microscopy, and generalized ellipsometry (GE). We find that, for substrate temperatures above 300 degrees C, the surface is rough and hazy; the AFM root-mean-square roughness is of the order of 150 A. It appears from GE that the optical response is anisotropic, the principal axes of anisotropy being along the [(1) over bar 11] and [0 (1) over bar1] directions. For a substrate temperature of approximately 300 degrees C, the surface is smooth and mirror-like and the AFM roughness is as low as 45 A. The sample is still anisotropic, even though the magnitude of the cross-polarized reflection coefficients are very small in this case. It appears that the anisotropy originates from the surface roughness, not the bulk.
引用
收藏
页码:1369 / 1375
页数:7
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