Fully Integrated Millimeter-Wave VCO with 32% Tuning Range

被引：0

作者：

Liu, Gang ^{[1
]}

Chartier, Sebastien ^{[1
]}

Trasser, Andreas ^{[1
]}

Schumacher, Hermann ^{[1
]}

机构：

[1] Univ Ulm, Inst Electron Devices & Circuits, D-89081 Ulm, Germany

来源：

2009 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUTS IN RF SYSTEMS, DIGEST OF PAPERS | 2009年

关键词：

Millimeter-Wave VCO; SiGe HBT; wide tuning range;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the authors present a fully integrated VCO with 32% tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 mu m Si/SiGe HBT technology with f(T) and f(max) of 80 and 90 GHz, respectively. It consumes 195 mW DC power and provides an output power of more than 5 dBm. A phase noise of -93 dBc/Hz at 1 MHz offset was measured for the free running VCO.

引用

页码：17 / 20

页数：4

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