Synthesis and Temperature Dependence of I-V Characteristic of Spin-Coated Nanostructured ZnO on P-Type Silicon

P-type silicon was used as a substrate of deposition of nanostructured ZnO by sol-gel spin coating technique, while zinc acetate, diethanolamine, and isopropyl were used as starting material, stabilizer and solvent respectively. Surface morphology was studied by Field Emission Scanning Electron Microscopy (FESEM). It was found that nanostructured ZnO was distributed uniformly over the P-type Silicon substrate. This was supported by atomic force microscopy (AFM) image which shows the all the surfaces are covered by nanoparticle of ZnO. X-ray diffraction (XRD) was employed to analyse the structural and crystalline of nanostructured ZnO. Three peak (100), (002), and (101) correspond to nanostructed ZnO are appear. Temperature dependence I-V characteristic was investigated in range of 25 K to 300 K by using Close Cycle Cryostat and using Helium as cooler agent. It is found that the resistance were decrease toward the higher temperature. The result shows that resistivity gradually decrease due to increases of temperature.