Towards a novel broadband spectrally dynamic solid state light source

被引：0

作者：

Nicol, David B. ^{[1
]}

Gupta, Shalini ^{[1
]}

Li, Nola ^{[1
]}

Asghar, Ali ^{[2
]}

Graugnard, Elton ^{[3
]}

Summers, Chris ^{[3
]}

Ferguson, Ian T. ^{[1
,3
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] EMCORE Corp, Somerset, NJ 08873 USA

[3] Georgia Inst Technol, Sch Math Sci Engn, Atlanta, GA 30332 USA

来源：

GAN, AIN, INN AND RELATED MATERIALS | 2006年 / 892卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The developments of two major components of a three terminal dual wavelength LED for excitation of multiple phosphors are described. Such a configuration will be novel Broadband Spectrally Dynamic Light Emitting Diode (BSDLED). First, work towards a functional tunnel junction in the GaN system is discussed. The developments of p+ and n+ GaN layers are specifically discussed in relation to their use in a buried current spreading contact layer. Second, the analysis of several phosphors and their application in a spectrally dynamic source is explored. The response to multiple wavelengths of the phosphors is analyzed to create a light source that can be tuned in "real time" to a wide range of correlated color temperatures.

引用

页码：19 / +

页数：2

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