Electrical and optical properties of indium tin oxide films prepared by pursed magnetron sputtering

被引：0
|
作者：
Chou, HW [1 ]
Lee, WJ [1 ]
Tsai, RY [1 ]
Fang, YK [1 ]
Chen, CC [1 ]
机构：
[1] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu 31015, Taiwan
来源：
ADVANCES IN OPTICAL INTERFERENCE COATINGS | 1999年 / 3738卷
关键词：
indium tin oxide (ITO); dc-pulsed magnetron sputtering; electrical and optical properties;
D O I：
10.1117/12.360113
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Indium tin oxide (ITO) thin films were prepared by unipolar and bipolar de-pulsed magnetron sputtering in a mixture of argon and oxygen onto the unheated glass substrates. The target of ITO with 10 weight percent (wt.%) tin is used. The influences of polar modes (unipolar and bipolar), output frequencies (0 similar to 33 kHz), and on times and off times on die optical, electrical and structural properties of ITO films are investigated. The correlations between the deposition parameters and the film properties are discussed. An optimal condition based on the polar mode and frequency of reactive de-pulsed sputtering for obtaining the high transmittance and low resistivity of ITO films is suggested.
引用
收藏
页码：453 / 460
页数：8
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