A fully integrated and high linearity UWB LNA implemented with current-reused technique and using single-biasing voltage

被引：0

作者：

Yang, Chin-Lung ^{[1
]}

Hsieh, Wei-Lin ^{[1
]}

Chiang, Yi-Chyun ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

2007 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES | 2007年

关键词：

CMOS; ultra-wideband (UWB); low-noise amplifier (LNA); miller effect; shunt-shunt feedback;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated ultra-wideband (UWB) low-noise amplifier (LNA) operating in the 7.2-9.1 GHz frequency range is presented. The LNA is constructed in self-biased and current-reused configuration to eliminate the external supply voltage applied in gate to decrease the complexity of bias circuitry. A shunt-shunt feedback network is not only used to archive self-biased architecture and neutralize the miller effect, but also increase the linearity and bandwidth of the amplifier. A prototype was designed and fabricated in a TSMC 0.18-mu m technology to demonstrate the proposed LNA circuit. The measurements of the prototype show the performances in the design band about 10dB power gain, 3.9dB noise figure, 2-dBm input-referred third-order intercept point (IIP3) and drawing 9mA from a 1.8V power supply.

引用

页码：48 / 51

页数：4

共 25 条

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