Spatially resolved measurements to improve analytical performance of solution-cathode glow discharge optical-emission spectrometry
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作者:
Schwartz, Andrew J.
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Indiana Univ, Dept Chem, Bloomington, IN 47405 USAIndiana Univ, Dept Chem, Bloomington, IN 47405 USA
Schwartz, Andrew J.
[1
]
Ray, Steven J.
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Indiana Univ, Dept Chem, Bloomington, IN 47405 USA
SUNY Buffalo, Dept Chem, Buffalo, NY 14260 USAIndiana Univ, Dept Chem, Bloomington, IN 47405 USA
Ray, Steven J.
[1
,2
]
Chan, George C. -Y.
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Indiana Univ, Dept Chem, Bloomington, IN 47405 USA
Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USAIndiana Univ, Dept Chem, Bloomington, IN 47405 USA
Chan, George C. -Y.
[1
,3
]
Hieftje, Gary M.
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Indiana Univ, Dept Chem, Bloomington, IN 47405 USAIndiana Univ, Dept Chem, Bloomington, IN 47405 USA
Hieftje, Gary M.
[1
]
机构:
[1] Indiana Univ, Dept Chem, Bloomington, IN 47405 USA
[2] SUNY Buffalo, Dept Chem, Buffalo, NY 14260 USA
[3] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
Past studies of the solution-cathode glow discharge (SCGD) revealed that elemental and molecular emission are not spatially homogenous throughout the source, but rather conform to specific zones within the discharge. Exploiting this inhomogeneity can lead to improved analytical performance if emission is collected only from regions of the discharge where analyte species emit strongly and background emission (from continuum, elemental and/or molecular sources) is lower. Effects of this form of spatial discrimination on the analytical performance of SCGD optical emission spectrometry (OES) have been investigated with an imaging spectrograph for fourteen atomic lines, with emphasis on detection limits and precision. Vertical profiles of the emission intensity, signal to -background ratio, and signal-to-noise ratio were collected and used to determine the optimal region to view the SCGD on a per-element basis. With optimized spatial filtering, detection limits ranged from 0.09-360 ppb, a 1.4-13.6 fold improvement over those obtained when emission is collected from the full vertical profile (1.1-840 ppb), with a 4.2-fold average improvement. Precision was found to be unaffected by spatial filtering, ranging from 0.5-2.6% relative standard deviation (RSD) for all elements investigated, closely comparable to the 0.4-2.4% RSD observed when no spatial filtering is used. Spatial profiles also appear useful for identifying optimal line pairs for internal standardization and for flagging the presence of matrix interferences in SCGD-OES. (C) 2016 Elsevier B.V. All rights reserved.
机构:
Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Ma, Jiaxian
Wang, Zheng
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Wang, Zheng
Li, Qing
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Li, Qing
Gai, Rongyin
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Gai, Rongyin
Li, Xiaohong
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
机构:
Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Wang, Zheng
Gai, Rongyin
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Changchun Univ Technol, Sch Chem Engn, Changchun 130012, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Gai, Rongyin
Zhou, Lei
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Donghua Univ, Sch Mat Sci & Engn, Shanghai 201620, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Zhou, Lei
Zhang, Zhen
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China