Laser-induced self organization of silicon-germanium hillocks for field emission displays

被引：2

作者：

Weizman, M. ^{[1
]}

Nickel, N. H. ^{[1
]}

Sieber, I. ^{[1
]}

Yan, B. ^{[2
]}

Fostiropoulos, K. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Kekulestr 5, D-12489 Berlin, Germany

[2] United Solar Ovon Corp, Trov, MI 48084 USA

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 10 | 2008年 / 5卷 / 10期

关键词：

D O I：

10.1002/pssc.200779511

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report here on the formation of a self-organized hillock structure in polycrystalline silicon-germanium (SiGe) thin films with a Ge content of 30 to 70%, due to the irradiation of the films with a sequence of laser pulses. By varying the crystallization parameters it is possible to control the periodicity length of the structure from 0.4 to 2 mu m. The self organization phenomenon can be switched on and off by using substrates with different thermal conductivities. In addition, we show that the self organized hillock structure exhibits a low field emission threshold of 20 V/mu m and therefore has an immense potential for field emission displays. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3239 / +

页数：2

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