The behaviour of a typical single-crystal Si solar cell under high intensity of electric field

被引:3
|
作者
Erel, S [1 ]
Akçil, M
Erel, GK
Çelik, V
机构
[1] Univ Kirikkale, Fac Engn, TR-71450 Kirikkale, Turkey
[2] Univ Sakarya, Vocat Sch Sakarya, TR-54100 Sakarya, Turkey
关键词
single-crystal Si solar cell; electric field; He-Ne laser; LED; light sources;
D O I
10.1016/j.solmat.2005.04.038
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The effect of high intensity of electric fields on the operation of a single-crystal Si solar cell was investigated in this work. A single-crystal Si solar cell was irradiated by spontaneous and stimulated light sources. Firstly, a triac-lamp having a tungsten filament and green, yellow, red and blue LEDs from the spontaneous light sources were used to irradiate the solar cell exposed to a high-intensity electric field E-DC. Later, as a stimulated light source He-Ne laser with; lambda = 633.8 nm and P = 1 mW was utilized, and the behaviour of the solar cell exposed to the electric field E-DC ranging from 100 x 10(3) to 500 x 10(3) V/m was studied. The results showed that the V-oc value of the solar cell irradiated by the two light sources mentioned above decreased due to the electric field. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:582 / 587
页数:6
相关论文
共 50 条
  • [22] A microcontroller for in situ single-crystal diffraction measurements with a PILATUS-2M detector under an alternating electric field
    Choe, Hyeokmin
    Heidbrink, Stefan
    Ziolkowski, Michael
    Pietsch, Ullrich
    Dyadkin, Vadim
    Gorfman, Semën
    Chernyshov, Dmitry
    Journal of Applied Crystallography, 2017, 50 (03): : 975 - 977
  • [23] Semiconductor-homojunction induction in single-crystal GaN nanostructures under a transverse electric field: Ab initio calculations
    Yilmaz, Hulusi
    Weiner, Brad R.
    Morell, Gerardo
    PHYSICAL REVIEW B, 2010, 81 (04)
  • [24] A microcontroller for in situ single-crystal diffraction measurements with a PILATUS-2M detector under an alternating electric field
    Choe, Hyeokmin
    Heidbrink, Stefan
    Ziolkowski, Michael
    Pietsch, Ullrich
    Dyadkin, Vadim
    Gorfman, Semen
    Chernyshov, Dmitry
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2017, 50 : 975 - 977
  • [25] MAGNETOELASTIC EFFECT OF 3.25-PERCENT SI-FE SINGLE-CRYSTAL UNDER LOW MAGNETIC-FIELD
    KASHIWAYA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2A): : 237 - 250
  • [26] INVESTIGATION OF THE FORMATION OF SINGLE-CRYSTAL LAYERS OF BETA-SIC IN SI BY HIGH-INTENSITY ION-IMPLANTATION DOPING
    ALEKSANDROV, PA
    BARANOVA, EK
    DEMAKOV, KD
    IGNATEV, AS
    KOMAROV, FF
    NOVIKOV, AP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 561 - 562
  • [27] High-field properties of single-crystal CaVO3
    Jung, MH
    Inoue, IH
    Nakotte, H
    Lacerda, AH
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 2002, 82 (07): : 801 - 804
  • [28] HIGH-FIELD MAGNETORESISTANCE OF GDIN3 SINGLE-CRYSTAL
    KLETOWSKI, Z
    ILIEW, N
    STALINSKI, B
    GLINSKI, M
    PHYSICA B & C, 1985, 130 (1-3): : 84 - 85
  • [29] HIGH-FIELD MAGNETIZATION OF SINGLE-CRYSTAL CEAL2
    BARBARA, B
    ROSSIGNOL, MF
    PURWINS, HG
    WALKER, E
    SOLID STATE COMMUNICATIONS, 1975, 17 (12) : 1525 - 1527
  • [30] HIGH-FIELD MAGNETIZATION OF A NDCU2 SINGLE-CRYSTAL
    SVOBODA, P
    JAVORSKY, P
    DIVIS, M
    SECHOVSKY, V
    PROKES, K
    DEBOER, FR
    ANDREEV, AV
    BARTASHEVICH, MI
    TORIKACHVILI, M
    NAKOTTE, H
    LACERDA, A
    SUGAWARA, H
    ONUKI, Y
    PHYSICA B, 1995, 211 (1-4): : 172 - 174