Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer

被引：141
|
作者：
Yin, Zongyou [1 ]
Zeng, Zhiyuan [1 ]
Liu, Juqing [1 ]
He, Qiyuan [1 ]
Chen, Peng [1 ]
Zhang, Hua [1 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
来源：
SMALL | 2013年 / 9卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
data storage; graphene oxide; memory devices; molybdenum disulfide; nanosheets; NONVOLATILE REWRITABLE MEMORY; LIQUID EXFOLIATION; CONJUGATED-POLYMER; FILMS; ELECTRODES; NANOPARTICLES; FABRICATION; TRANSISTORS;
D O I：
10.1002/smll.201201940
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2). Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：727 / 731
页数：5
相关论文
共 50 条
  • [31] Origin of Nanoscale Friction Contrast between Supported Graphene, MoS2, and a Graphene/MoS2 Heterostructure
    Vazirisereshk, Mohammad R.
    Ye, Han
    Ye, Zhijiang
    Otero-de-la-Roza, Alberto
    Zhao, Meng-Qiang
    Gao, Zhaoli
    Johnson, A. T. Charlie
    Johnson, Erin R.
    Carpick, Robert W.
    Martini, Ashlie
    NANO LETTERS, 2019, 19 (08) : 5496 - 5505
  • [32] Band renormalization and spin polarization of MoS2 in graphene/MoS2 heterostructures
    Coy-Diaz, Horacio
    Bertran, Francois
    Chen, Chaoyu
    Avila, Jose
    Rault, Julien
    Le Fevre, Patrick
    Asensio, Maria C.
    Batzill, Matthias
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2015, 9 (12): : 701 - 706
  • [33] Pulsed Laser Deposited MoS2 for the Fabrication of MoS2/Graphene Photodetector
    Zhang, Shuye
    Zhang, Yanxin
    Lin, Tiesong
    He, Peng
    2019 IEEE 19TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO 2019), 2019, : 90 - 93
  • [34] Coulomb drag transistor using a graphene and MoS2 heterostructure
    Jin, Youngjo
    Joo, Min-Kyu
    Moon, Byoung Hee
    Kim, Hyun
    Lee, Sanghyup
    Jeong, Hye Yun
    Lee, Young Hee
    COMMUNICATIONS PHYSICS, 2020, 3 (01)
  • [35] Existence of ferroelectric resistive switching memory in MoS2/PVDF heterojunction devices
    Liu, Wei-song
    Yang, Hui
    Li, Lan
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (40)
  • [36] Coulomb drag transistor using a graphene and MoS2 heterostructure
    Youngjo Jin
    Min-Kyu Joo
    Byoung Hee Moon
    Hyun Kim
    Sanghyup Lee
    Hye Yun Jeong
    Young Hee Lee
    Communications Physics, 3
  • [37] Excellent photocatalytic performance of few-layer MoS2/graphene hybrids
    Yuan, Ye
    Shen, Pengfei
    Li, Quanjun
    Chen, Gong
    Zhang, Huafang
    Zhu, Luyao
    Zou, Bo
    Liu, Bingbing
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 700 : 12 - 17
  • [38] Supercapacitive performances of few-layer MoS2 on reduced graphene oxides
    Song, Xuehua
    Chen, Qibin
    Shen, Enhui
    Liu, Honglai
    JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2019, 23 (03) : 911 - 923
  • [39] Supercapacitive performances of few-layer MoS2 on reduced graphene oxides
    Xuehua Song
    Qibin Chen
    Enhui Shen
    Honglai Liu
    Journal of Solid State Electrochemistry, 2019, 23 : 911 - 923
  • [40] Numerical Analysis of a CZTS Solar Cell with MoS2 as a Buffer Layer and Graphene as a Transparent Conducting Oxide Layer for Enhanced Cell Performance
    Ghosh, Sampad
    Yasmin, Samira
    Ferdous, Jannatul
    Saha, Bidyut Baran
    MICROMACHINES, 2022, 13 (08)
12345