MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon-Polaritons

被引：0
|
作者：
Baidus, N. V. [1 ]
Kukushkin, V. A. [2 ,3 ]
Nekorkin, S. M. [1 ]
Kruglov, A. V. [1 ,3 ]
Reunov, D. G. [3 ]
机构：
[1] Lobachevsky State Univ Nizhny Novgorod, Res Phys Tech Inst, Nizhnii Novgorod 603950, Russia
[2] Russian Acad Sci, Inst Appl Phys, Nizhnii Novgorod 603950, Russia
[3] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
OPTICAL POLARIZATION; ELECTROLUMINESCENCE;
D O I：
10.1134/S1063782619030047
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The properties of InGaAs/GaAs quantum dots (QDs) grown by MOS-hydride migration-stimulated epitaxy at a reduced pressure using submonolayer deposition are investigated. The wavelength of their photoluminescence at 300 K is in the range of 1.28-1.31 m and can be controlled by varying the growth temperature and the number of QD-deposition cycles. The highest QD surface density is 3 x 10(10) cm(-2). Structures with 1-3 QD layers and spacer layers 5-12 nm thick between them are grown. The spacer layers (as well as the cap layers) are selectively doped with carbon (acceptor). It is established that the QD photoluminescence is characterized by an enhanced degree of polarization in the direction orthogonal to the structure plane. This should favor their use for the excitation of surface plasmon-polaritons in Schottky light-emitting diodes.
引用
收藏
页码：326 / 331
页数：6
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