Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

被引：0

作者：

Guo Lun-Chun ^{[1
]}

Wang Xiao-Liang ^{[1
]}

Xiao Hong-Ling ^{[1
]}

Ran Jun-Xue ^{[1
]}

Wang Cui-Mei ^{[1
]}

Ma Zhi-Yong ^{[1
]}

Luo Wei-Jun ^{[1
]}

Wang Zhan-Guo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 01期

关键词：

CONTENT ALGAN/GAN HETEROSTRUCTURES; CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; AL-CONTENT; ALGAN/ALN/GAN HETEROSTRUCTURES; HEMT STRUCTURES; PHASE EPITAXY; SAPPHIRE; GAS; DENSITIES;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN structure are investigated by solving coupled Schrodinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (AlyGa1-yN) once the AlN content of the second barrier is smaller than a critical value y(c), and will increase with the thickness of the second barrier (AlyGa1-yN) when the critical AlN content of the second barrier y(c) is exceeded. Our calculations also show that the critical AlN content of the second barrier y(c) will increase with the AlN content and the thickness of the first barrier layer (AlxGa1-xN).

引用

页数：4

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