Growth mechanism of Pt modified TiO2 thick film

被引：10
|
作者：
Zhang, Maolin [1 ]
Yuan, Zhanheng [2 ]
Ning, Tao [3 ]
Song, Jianping [2 ]
Zheng, Cheng [2 ]
机构：
[1] Xidian Univ, Sch Tech Phys, Xian 710071, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Shaanxi, Peoples R China
[3] PLA, Dept Logist, Construct Engn Res Inst, Xian 710032, Shaanxi, Peoples R China
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2013年 / 176卷
基金：
中国国家自然科学基金;
关键词：
Pt/TiO2; Surface state; Defect; Growth mechanism; GAS; HYDROGEN; TITANIA;
D O I：
10.1016/j.snb.2012.09.054
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Platinum is widely used to modify TiO2 based gas sensing materials, and the promotion mechanism accompanied by praiseworthy results are discussed deeply. In this work, the growth mechanism of Pt dispersed on TiO2 thick film surface is discussed. The surface state of Pt is studied by XRD, XPS, SEM and Kroger-Vink defect theory in depth. Results indicate that Pt is not only dispersed on TiO2 thick film surface in metallic state but also occupy the lattice of Ti vacancy and form the oxidation state Ti1-xPtxO2. A simple model is proposed to explain the growth process of Pt and Ti1-xPtxO2. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：723 / 728
页数：6
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