Nanostructural analysis of ZnO:Al thin films for carrier-transport mechanisms

被引：14

作者：

Lee, Seung-Yoon ^{[1
,2
]}

Lee, Woojin ^{[2
]}

Nahm, Changwoo ^{[2
]}

Kim, Jongmin ^{[2
]}

Byun, Sujin ^{[2
]}

Hwang, Taehyun ^{[2
]}

Lee, Byung-Kee ^{[1
]}

Jang, Young Il ^{[1
]}

Lee, Sungeun ^{[1
]}

Lee, Heon-Min ^{[1
]}

Park, Byungwoo ^{[2
]}

机构：

[1] LG Elect Adv Res Inst, Emerging Technol Lab, Seoul 137724, South Korea

[2] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Transparent conducting oxide; Al-doped ZnO; Sputtering; ZINC-OXIDE FILMS;

D O I：

10.1016/j.cap.2012.12.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carrier mobility of sputter-deposited Al-doped ZnO transparent-conducting (ZnO:Al) thin films was controlled between 22 and 48 cm(2)/Vs by varying the ZnO: Al seed layer. The statistical distribution of the [001] grain misorientation was characterized from the X-ray diffraction rocking curve in the range from 0.043 (2.5 degrees) to 0.179 rad (10.2 degrees). The grain-boundary energy barriers (E-b) from Seto's model [1] clearly exhibit linear dependence on the grain-boundary misorientation angle (omega) according to the equation E-b = 78 +/- 4 + 173 +/- 32 omega meV. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：775 / 778

页数：4

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