Dielectric and tunable properties of highly (110)-oriented (Ba0.65Sr0.35) TiO3 thin films deposited on Pt/LaNiO3/SiO2/Si substrates

被引：14

作者：

Guo, Yiping ^{[1
]}

Akai, Daisuke ^{[2
]}

Sawada, Kazuaki ^{[3
]}

Ishida, Makoto ^{[3
]}

Gu, Mingyuan ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, State Key Lab MMCs, Shanghai 200030, Peoples R China

[2] Toyohashi Univ Technol, Venture Business Lab, Toyohashi, Aichi 4418580, Japan

[3] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2009年 / 49卷 / 01期

关键词：

BST; Dielectric tunability; (110) orientation; LaNiO3; MICROWAVE PHASE SHIFTERS; ELECTRICAL-PROPERTIES; LEAKAGE CURRENT; LANIO3; LAYER;

D O I：

10.1007/s10971-008-1831-z

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly (110)-oriented Ba0.65Sr0.35TiO3 films were deposited on Pt/LaNiO3/SiO2/Si substrates by a sol-gel method. It was found that the (110)-preferred Pt film was very effective for growing (110)-oriented ferroelectric films with perovskite structure. The as-grown Ba0.65Sr0.35TiO3 films showed good dielectric properties with dielectric constant epsilon(T)(33)/epsilon(0) = 1750 and loss tangent tan delta = 0.026. Excellent dielectric tunability was also achieved in the (110)-oriented films. With applying an electric field of 230 kV/cm at 100 kHz, the dielectric tunability and the figure of merit can reach up to 63.4% and 16, respectively. These results indicate that the highly (110)-oriented Ba0.65Sr0.35TiO3 film is a promising candidate for the applications in microwave tunable devices.

引用

页码：66 / 70

页数：5

共 50 条

[21] Dielectric properties of (Ba, Sr)TiO3 thin films deposited by RF sputtering
Horikawa, Tsuyoshi, 1600, (32):
[22] Dielectric properties of highly oriented Pb0.65Ba0.35ZrO3 thin films
Kim, JS
Choi, JS
Lee, JH
Kim, SH
Jeon, SH
Hwang, IR
Park, BH
Choi, TJ
Shin, SH
Lee, JC
Lee, MJ
Seo, SA
Yoo, IK
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 : S243 - S246
[23] Dielectric properties of (Ba,Sr)TiO3 thin films for tunable microwave applications
Chang, WT
Horwitz, JS
Kim, WJ
Pond, JM
Kirchoefer, SW
Gilmore, CM
Qadri, SB
Chrisey, DB
INTEGRATED FERROELECTRICS, 1999, 24 (1-4) : 257 - 272
[24] Preparation and properties of highly oriented LaNiO3 thin films on different substrates
Yang, Xian
Wu, Xiaoqing
Ren, Wei
Shi, Peng
Yan, Xin
Lei, Hongsheng
Yao, Xi
FERROELECTRICS, 2007, 357 : 53 - 57
[25] Evaluation of strain-dependent dielectric properties in BaTiO3/LaNiO3 and (Ba, Sr) TiO3/LaNiO3 artificial superlattice films on LaNiO3-coated SrTiO3 substrates
Liang, YC
Lee, HY
Liu, HJ
Wu, KF
Wu, TB
Lee, CH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (09) : F129 - F132
[26] Dielectric relaxations in Ba0.85Sr0.15TiO3 thin films deposited on Pt/Ti/SiO2/Si substrates by sol–gel method
A. Selmi
O. Khaldi
M. Mascot
F. Jomni
J. C. Carru
Journal of Materials Science: Materials in Electronics, 2016, 27 : 11299 - 11307
[27] Dielectric and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films on Pt/Ti/SiO2/Si substrates
Bao, DH
Mizutani, N
Yao, X
Zhang, LY
APPLIED PHYSICS LETTERS, 2000, 77 (08) : 1203 - 1205
[28] Effect of LaNiO3 buffer layer on dielectric and tunable properties of Pb0.82La0.08Sr0.1Ti0.98O3 thin films on Pt/Ti/SiO2/Si substrates
Liu, Liu
Tang, Minghua
Tang, Zhenhua
Xu, Dinglin
Li, Linqi
Zhou, Yichun
JOURNAL OF CRYSTAL GROWTH, 2014, 404 : 136 - 139
[29] Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates
Zhai, Jiwei
Yao, Xi
Xu, Zhengkui
Chen, Haydn
Journal of Applied Physics, 2006, 100 (03):
[30] Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates
Zhai, Jiwei
Yao, Xi
Xu, Zhengkui
Chen, Haydn
JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)

← 1 2 3 4 5 →