Dielectric and tunable properties of highly (110)-oriented (Ba0.65Sr0.35) TiO3 thin films deposited on Pt/LaNiO3/SiO2/Si substrates

被引：14
|
作者：
Guo, Yiping [1 ]
Akai, Daisuke [2 ]
Sawada, Kazuaki [3 ]
Ishida, Makoto [3 ]
Gu, Mingyuan [1 ]
机构：
[1] Shanghai Jiao Tong Univ, State Key Lab MMCs, Shanghai 200030, Peoples R China
[2] Toyohashi Univ Technol, Venture Business Lab, Toyohashi, Aichi 4418580, Japan
[3] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
来源：
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2009年 / 49卷 / 01期
关键词：
BST; Dielectric tunability; (110) orientation; LaNiO3; MICROWAVE PHASE SHIFTERS; ELECTRICAL-PROPERTIES; LEAKAGE CURRENT; LANIO3; LAYER;
D O I：
10.1007/s10971-008-1831-z
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Highly (110)-oriented Ba0.65Sr0.35TiO3 films were deposited on Pt/LaNiO3/SiO2/Si substrates by a sol-gel method. It was found that the (110)-preferred Pt film was very effective for growing (110)-oriented ferroelectric films with perovskite structure. The as-grown Ba0.65Sr0.35TiO3 films showed good dielectric properties with dielectric constant epsilon(T)(33)/epsilon(0) = 1750 and loss tangent tan delta = 0.026. Excellent dielectric tunability was also achieved in the (110)-oriented films. With applying an electric field of 230 kV/cm at 100 kHz, the dielectric tunability and the figure of merit can reach up to 63.4% and 16, respectively. These results indicate that the highly (110)-oriented Ba0.65Sr0.35TiO3 film is a promising candidate for the applications in microwave tunable devices.
引用
收藏
页码：66 / 70
页数：5
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