Low leakage 3xVDD-tolerant ESD detection circuit without deep N-well in a standard 90-nm low-voltage CMOS process

A new low leakage 3xVDD-tolerant electrostatic discharge (ESD) detection circuit using only low-voltage device without deep N-well is proposed in a standard 90-nm 1.2-V CMOS process. Stacked-transistors technique is adopted to sustain high-voltage stress and reduce leakage current. No NMOSFET operates in high voltage range and it is unnecessary to use any deep N-well. The proposed detection circuit can generate a 38 mA current to turn on the substrate triggered silicon-controlled rectifier (STSCR) under the ESD stress. Under normal operating conditions, all the devices are free from over-stress voltage threat. The leakage current is 88 nA under 3xVDD bias at 25A degrees C. The simulation result shows the circuit can be successfully used for 3xVDD-tolerant I/O buffer.