Analysis of I-V-T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature

被引：10

作者：

Fritah, A. ^{[1
]}

Dehimi, L. ^{[1
,2
]}

Pezzimenti, F. ^{[3
]}

Saadoune, A. ^{[1
]}

Abay, B. ^{[4
]}

机构：

[1] Univ Biskra, Lab Metall & Semicond Mat, Biskra, Algeria

[2] Elhadj Lakhdar Univ, Fac Sci, Batna, Algeria

[3] Mediterranea Univ Reggio Calabria, DIIES, I-89100 Reggio Di Calabria, Italy

[4] Ataturk Univ, Dept Phys, Fac Sci, TR-25240 Erzurum, Turkey

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 06期

关键词：

Schottky diode; barrier height; numerical simulation; patch area; CURRENT-VOLTAGE CHARACTERISTICS; DEPENDENT CURRENT-VOLTAGE; ELECTRICAL CHARACTERISTICS; TRANSPORT; GAAS; AL; PERFORMANCE; INTERFACE;

D O I：

10.1007/s11664-019-07129-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current-voltage (I-V) characteristics of inhomogeneous Au/n-InP Schottky barrier (SB) diodes have been investigated in the temperature range of 100K to 300K, and detailed numerical simulation study carried out using a physical device simulator. The experimental I-V curves for the diode in both forward- and reverse-bias conditions were fit to explain the current transport mechanisms at low temperature. Tunneling current flows through the native oxide and nanometer-sized patches embedded at the Au/n-InP interface. These patches result in a lower (local) barrier height which is temperature dependent and responsible for the diode current behaviors in the low-bias regime. The patch area is on the order of one-millionth of the total diode area, and the SB is between 0.01eV and 0.3eV in the patch region. The simulation results are in good agreement with the measurements in the whole explored current range extending over six orders of magnitude.

引用

页码：3692 / 3698

页数：7

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