III-Nitride Optochemical Nanosensors

被引：0
|
作者：
Teubert, Joerg [1 ]
Eickhoff, Martin [1 ]
机构：
[1] Univ Giessen, Inst Phys, Giessen, Germany
来源：
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [41] III-Nitride semiconductors for intersubband devices
    Kotsar, Y.
    Machhadani, H.
    Sakr, S.
    Kandaswamy, P. K.
    Tchernycheva, M.
    Bellet-Amalric, E.
    Julien, F. H.
    Monroy, E.
    QUANTUM SENSING AND NANOPHOTONIC DEVICES VIII, 2011, 7945
  • [42] GaN Substrates for III-Nitride Devices
    Paskova, Tanya
    Hanser, Drew A.
    Evans, Keith R.
    PROCEEDINGS OF THE IEEE, 2010, 98 (07) : 1324 - 1338
  • [43] Initial stages of III-nitride growth
    Grossner, U
    Furthmüller, J
    Bechstedt, F
    APPLIED PHYSICS LETTERS, 1999, 74 (25) : 3851 - 3853
  • [44] Band offsets in III-nitride heterostructures
    Ünlü, H
    Asenov, A
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (07) : 591 - 594
  • [45] Coalescence aspects of III-nitride epitaxy
    Lebedev, V.
    Tonisch, K.
    Niebelschutz, F.
    Cimalla, V.
    Cengher, D.
    Cimalla, I.
    Mauder, Ch.
    Hauguth, S.
    Ambacher, O.
    Morales, F. M.
    Lozano, J. G.
    Gonzalez, D.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
  • [46] Recent developments in the III-nitride materials
    Monemar, B.
    Paskov, P. P.
    Bergman, J. P.
    Toropov, A. A.
    Shubina, T. V.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (06): : 1759 - 1768
  • [47] Atomistic study of III-nitride nanotubes
    Kang, JW
    Hwang, HJ
    COMPUTATIONAL MATERIALS SCIENCE, 2004, 31 (3-4) : 237 - 246
  • [48] Photogated transistor of III-nitride nanorods
    Seo, H. W.
    Tu, L. W.
    Chen, Q. Y.
    Ho, C. Y.
    Lin, Y. T.
    Wu, K. L.
    Jang, D. J.
    Norman, D. P.
    Ho, N. J.
    APPLIED PHYSICS LETTERS, 2010, 96 (10)
  • [49] III-Nitride Tunnel Junctions and Their Applications
    Rajan, S.
    Takeuchi, T.
    III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION, 2017, 133 : 209 - 238
  • [50] Submicron technology for III-nitride semiconductors
    Palacios, T
    Calle, F
    Monroy, E
    Muñoz, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2071 - 2074
12345