Direct Source-to-Drain Tunneling Current in Ultra-Short Channel DG MOSFETs by Wavelet Transform

被引：0

作者：

Yilmaz, Kerim ^{[1
,2
]}

Farokhnejad, Atieh ^{[1
,2
]}

Criado, Francisco ^{[3
]}

Iniguez, Benjamin ^{[2
]}

Lime, Francois ^{[2
]}

Kloes, Alexander ^{[3
]}

机构：

[1] TH Mittelhessen Univ Appl Sci, NanoP, Giessen, Germany

[2] Univ Rovira & Virgili, DEEEA, Tarragona, Spain

[3] THM, NanoP, Giessen, Germany

来源：

LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC 2020) | 2020年

关键词：

direct source-to-drain tunneling; Wavelet; WKB; NEGF; Tsu-Esaki formula; tunneling probability; device simulation; double-gate (DG); ultra-short channel; ultra-thin body; short-channel effect (SCE);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a new approach to determine the effect of direct source-to-drain tunneling (DSDT) on 2-D double-gate (DG) MOSFETs is presented. The tunneling probability of electrons with different energy levels and tunneling distances through the potential barrier is calculated using harmonic wavelets and the results are compared to those calculated with the Wentzel-Kramers-Brillouin (WKB) method. Next, by having the tunneling probability the DSDT current is calculated and compared to TCAD simulations data, which are based on WKB model, and also to NanoMOS, a Non-Equilibrium Green's Function (NEGF) 2-D simulator for DG devices. The difference between these methods and their impacts on the resulted DSDT as well as the subthreshold behavior are investigated. Furthermore, a first step towards compact modeling is made by approximating the tunneling current density.

引用

页数：4

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