Electron-hole transport asymmetry in Boron-doped Graphene Field Effect Transistors

被引：8

作者：

Marconcini, P. ^{[1
]}

Cresti, A. ^{[2
]}

Triozon, F. ^{[3
]}

Fiori, G. ^{[1
]}

Biel, B. ^{[4
]}

Niquet, Y. -M. ^{[5
]}

Macucci, M. ^{[1
]}

Roche, S. ^{[6
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, Via Caruso 16, I-56122 Pisa, Italy

[2] Univ Savoie, CNRS, Grenoble INP UJF, IMP LAHC,UMR 5130, F-38016 Grenoble, France

[3] CEA Grenoble, LETI MINATEC, F-38054 Grenoble, France

[4] Univ Granada, Fac Ciencias, CITIC, Dept Elect & Tecnol Comp, E-18071 Granada, Spain

[5] CEA Grenoble, INAC SP2M, F-38054 Grenoble, France

[6] Univ Autonoma Barcelona, Catalan Inst Nanotechnol, CSIC, CIN2 ICN, Bellaterra 08193, Spain

来源：

2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE) | 2012年

关键词：

CARBON NANOTUBES; NANORIBBONS; GAPS;

D O I：

10.1109/IWCE.2012.6242844

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

One of the main drawbacks of undoped graphene for digital electronics applications is its ambipolar behavior. Here we study the trasfer characteristics of transistors based on boron-doped graphene nanoribbons with atomic concentrations up to 0.6%, showing that the presence of doping generates a clear electron-hole transport asymmetry. In order to obtain these results, we introduce a method to accurately reproduce density functional theory (DFT) results using a self-consistent tight-binding (TB) model with a proper distribution of fixed charges.

引用

页数：4

共 50 条

[31] Electron-Spin Relaxation in Boron-Doped Graphene Nanoribbons
Boto, Roberto A.
Cebreiro-Gallardo, Antonio
Menchon, Rodrigo E.
Casanova, David
JOURNAL OF CHEMICAL THEORY AND COMPUTATION, 2024, 20 (22) : 9906 - 9916
[32] Prominent electron-hole asymmetry in thermoelectric transport of LaCoO3
Okazaki, Ryuji
Tomiyasu, Keisuke
PHYSICAL REVIEW B, 2022, 105 (03)
[33] The electron-hole asymmetry in the cuprate superconductors
Kobayashi, A
Tsuruta, A
Matsuura, T
Kuroda, Y
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2003, 388 : 39 - 40
[34] Electron-hole cotunneling effect in coupled single-electron transistors
Shin, M
Kim, GH
PHYSICAL REVIEW B, 2002, 66 (23) : 1 - 4
[35] Electron-hole asymmetry is the key to superconductivity
Hirsch, JE
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2003, 17 (18-20): : 3236 - 3241
[36] Electron-hole asymmetry of the tunneling effect in ferromagnet/superconductor junctions
Hirai, T
Yoshida, N
Tanaka, Y
Inoue, J
Kashiwaya, S
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2002, 367 (1-4): : 137 - 140
[37] Electron-hole asymmetry and band gaps of commensurate double moire patterns in twisted bilayer graphene on hexagonal boron nitride
Shin, Jiseon
Park, Youngju
Chittari, Bheema Lingam
Sun, Jin-Hua
Jung, Jeil
PHYSICAL REVIEW B, 2021, 103 (07)
[38] HOLE CAPTURE IN BORON-DOPED DIAMOND
GLESENER, JW
APPLIED PHYSICS LETTERS, 1994, 64 (02) : 217 - 219
[39] Electron transport mechanisms in thin boron-doped diamond films
Yater, J.E. (yater@estd.nrl.navy.mil), 1600, American Institute of Physics Inc. (96):
[40] Electron transport mechanisms in thin boron-doped diamond films
Yater, JE
Shih, A
Butler, JE
Pehrsson, PE
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 446 - 453

← 1 2 3 4 5 →