Electron-hole transport asymmetry in Boron-doped Graphene Field Effect Transistors

被引：8

作者：

Marconcini, P. ^{[1
]}

Cresti, A. ^{[2
]}

Triozon, F. ^{[3
]}

Fiori, G. ^{[1
]}

Biel, B. ^{[4
]}

Niquet, Y. -M. ^{[5
]}

Macucci, M. ^{[1
]}

Roche, S. ^{[6
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, Via Caruso 16, I-56122 Pisa, Italy

[2] Univ Savoie, CNRS, Grenoble INP UJF, IMP LAHC,UMR 5130, F-38016 Grenoble, France

[3] CEA Grenoble, LETI MINATEC, F-38054 Grenoble, France

[4] Univ Granada, Fac Ciencias, CITIC, Dept Elect & Tecnol Comp, E-18071 Granada, Spain

[5] CEA Grenoble, INAC SP2M, F-38054 Grenoble, France

[6] Univ Autonoma Barcelona, Catalan Inst Nanotechnol, CSIC, CIN2 ICN, Bellaterra 08193, Spain

来源：

2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE) | 2012年

关键词：

CARBON NANOTUBES; NANORIBBONS; GAPS;

D O I：

10.1109/IWCE.2012.6242844

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

One of the main drawbacks of undoped graphene for digital electronics applications is its ambipolar behavior. Here we study the trasfer characteristics of transistors based on boron-doped graphene nanoribbons with atomic concentrations up to 0.6%, showing that the presence of doping generates a clear electron-hole transport asymmetry. In order to obtain these results, we introduce a method to accurately reproduce density functional theory (DFT) results using a self-consistent tight-binding (TB) model with a proper distribution of fixed charges.

引用

页数：4

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