3D WL MEMS WITH TSV LAST TECHNOLOGY'S MECHANICAL ANALYSIS

被引：0

作者：

Lee, Hsiao-Yen ^{[1
]}

Kuo, Chin-Chung ^{[1
]}

Wang, Chung-Ting ^{[1
]}

Lee, Ying-Chih ^{[1
]}

Chen, Ming-Hung ^{[1
]}

Tarng, Hsin-Lu ^{[1
]}

Hung, Chih-Pin ^{[1
]}

机构：

[1] Adv Semicond Engn Inc, Kaohsiung, Taiwan

来源：

2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2017年

关键词：

Through-silicon via; Micromechanical device; Stress; Three-dimensional display; Finite element analysis;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The through-silicon-via (TSV) technology is one of the most effective approaches to fulfill the form factor, profile, performance, and 3D interconnect demand of next generation handheld and wearable electronics. This paper introduces two structures of TSV LAST technology, standard flow and short flow. The standard flow TSV LAST structure shows better warpage control performance. The short flow TSV LAST structure can shorten manufacture procedures up to 20% and reduce the cost. This paper reports two warpage control solutions: (1) low modulus and low CTE passivation material, and (2) a balance layer design that the warpage issue can be improved more than 30% and 20%, respectively.

引用

页码：1380 / 1383

页数：4

共 50 条

[31] TSV Repairing for 3D ICs using Redundant TSV
Ghosh, Sudeep
Roy, Surajit Kumar
Rahaman, Hafizur
Giri, Chandan
2017 7TH INTERNATIONAL SYMPOSIUM ON EMBEDDED COMPUTING AND SYSTEM DESIGN (ISED), 2017,
[32] 3D TSV Based High Frequency Components for RF IC and RF MEMS Applications
Fernandez-Bolanos, Montserrat
Vitale, Wolfgang A.
Lopez, Mariazel Maqueda
Ionescu, Adrian M.
Klumpp, Armin
Merkel, Reinhard
Weber, Josef
Ramm, Peter
Ocket, Ilja
De Raedt, Walter
Enayati, Amin
2016 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC), 2016,
[33] Simulation in 3D Integration and TSV
Weide-Zaage, K.
Moujbani, A.
Kludt, J.
2014 IEEE 5TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS), 2014,
[34] 3D Stack Method for Micro-PNT Based on TSV Technology
Duan, Xiaomin
Cao, Huiliang
Liu, Zhiyu
2017 IEEE 3RD INFORMATION TECHNOLOGY AND MECHATRONICS ENGINEERING CONFERENCE (ITOEC), 2017, : 172 - 175
[35] Analysis of TSV-to-TSV Coupling with High-Impedance Termination in 3D ICs
Song, Taigon
Liu, Chang
Kim, Dae Hyun
Lim, Sung Kyu
Cho, Jonghyun
Kim, Joohee
Pak, Jun So
Ahn, Seungyoung
Kim, Joungho
Yoon, Kihyun
2011 12TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED), 2011, : 122 - 128
[36] 3D Hetero-Integration Technology with Backside TSV and Reliability Challenges
Lee, Kang-Wook
Murugesan, M.
Fukushima, T.
Tanaka, T.
Koyanagi, M.
2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2013,
[37] GLOBALFOUNDRIES demonstrates 3D TSV capabilities on 20nm technology
不详
SOLID STATE TECHNOLOGY, 2013, 56 (04) : 8 - 9
[38] 3D TSV Mid-End Processes and Assembly/Packaging Technology
Yoon, Seung Wook
Hsiao, Yung Kuan
Dzafir, Shariff
Bum, Andy Yong Chang
Choi, Won Kyung
Kim, Y. C.
Kang, G. T.
Marimuthu, Pandi C.
EMPC-2011: 18TH EUROPEAN MICROELECTRONICS & PACKAGING CONFERENCE, 2011,
[39] Distributed Multi TSV 3D Clock Distribution Network in TSV-based 3D IC
Kim, Dayoung
Kim, Joohee
Cho, Jonghyun
Pak, Jun So
Kim, Joungho
Lee, Hyungdong
Lee, Junho
Park, Kunwoo
2011 IEEE 20TH CONFERENCE ON ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING AND SYSTEMS (EPEPS), 2011, : 87 - 90
[40] 3D EBSD characterizations on copper TSV for 3D interconnections
Putra, W. N.
Trigg, A. D.
Li, H. Y.
Gan, C. L.
2014 IEEE 21ST INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2014, : 295 - 299

← 1 2 3 4 5 →