Electron trapping variations in single-crystal pixelated HgI2 gamma-ray spectrometers

被引：0
|
作者：
Baciak, JE [1 ]
He, Z [1 ]
Devito, RP [1 ]
机构：
[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA
来源：
2001 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORDS, VOLS 1-4 | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of thick (>5mm) HgI2 room temperature gamma-ray detectors having 4 small pixel anodes are investigated. Spectra for the different anodes (overall and for individual interaction depths) are presented. The mu-tau product for electrons was measured to study the variations of electron transport within a single HgI2 crystal. By using the single polarity charge sensing with depth sensing, the mu(e)tau(e) was estimated to vary from similar to9 x 10(4) cm(2)/V to 7 x 10(-3) cm(2)/V. Individual pixels have the ability to produce spectra with resolutions less than 3% at 662 keV. Some effects of electron detrapping and hole transport are also discussed.
引用
收藏
页码：2335 / 2339
页数：5
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