The effect of substrate temperatures on the structural, optical and electrical properties of N-Al codoped ZnO thin films

N-Al codoped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. The films were deposited at different substrate temperatures ranging from 100 degrees C to 400 degrees C. The ZnO (002) peak showed the highest intensity at the substrate temperature of 400 degrees C. The prepared films showed good transmission of above 72% in the visible range and the calculated values of energy band gaps were in the range (3.42 +/- 0.1-3.54 +/- 0.1 eV). Raman Peaks at 273.58 cm(-1) and 579.49 cm(-1) corresponding to ZnO:N and ZnO:AlN respectively were also observed. The Hall measurements showed that the films deposited at RT and 400 degrees C exhibit p-type conduction with hole concentrations of 1.52 x 10(+19) cm(-3) and 63 x 10(+17) cm(-3) respectively. The corresponding mobilities were 0.866 cm(2) V-1 s(-1) and 10.5 cm(2) V-1 s(-1) respectively. (C) 2015 Elsevier B.V. All rights reserved.