Carrier dynamics in quantum well lasers

被引:4
|
作者
Thränhardt, A
Koch, SW
Hader, J
Moloney, JV
机构
[1] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
[2] Univ Marburg, Wissensch Zentrum Mat Wissensch, D-35032 Marburg, Germany
[3] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA
关键词
carrier scattering; dilute nitrides; microscopic gain calculation; nonequilibrium laser theory; optical cooling; quantum well lasers;
D O I
10.1007/s11082-006-0036-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A fully microscopic theory is used to perform an analysis of carrier-carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier-carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.
引用
收藏
页码:361 / 368
页数:8
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