Variable range hopping and positive magnetoresistance in n type semiconductor CuIn3Se5

被引：6
|
作者：
Wasim, S. M. [1 ]
Essaleh, L. [2 ]
Marin, G. [3 ]
Galibert, J. [4 ,5 ]
机构：
[1] Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5101, Venezuela
[2] Cadi Ayyad Univ, Fac Sci & Technol, Lab Condensed Matter & Nanostruct LMCN, Dept Appl Phys, Marrakech, Morocco
[3] IVIC, Ctr Invest & Tecnol Mat CITeMa, LEIMN, Maracaibo 4011, Venezuela
[4] CNRS INSA UJF UPS, Lab Natl Champs Magnet Intenses, UPR3228, Toulouse, France
[5] CNRS INSA UJF UPS, Lab Natl Champs Magnet Intenses, UPR3228, Grenoble, France
来源：
MATERIALS RESEARCH BULLETIN | 2017年 / 87卷
关键词：
semiconductors; electronic materials; semiconductivity; X-ray diffraction; electrical properties; defects; electronic structure; COPPER INDIUM DISELENIDE; NEGATIVE MAGNETORESISTANCE; CUINSE2; REGIME; CONDUCTION;
D O I：
10.1016/j.materresbull.2016.12.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Variable range hopping mechanism of Mott type is observed for the first time in two different temperature ranges between 10K and 65 K in the ordered defect compound n-CuIn3Se5. Analysis of magnetic field dependence of positive magnetoresistance up to 27T that has been made at several temperatures up to 55K, shows B-2 and B-1/3 behavior in low and high field regions. This is in good agreement with the theory of Shklovskii-Efros for hopping conduction in lightly doped semiconductors. The field dependence of the localization temperature To and localization length is discussed. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：219 / 223
页数：5
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