Ultrathin SiO2 in future Si devices and integrated circuits

被引：0
|
作者：
Upadhyay, HN [1 ]
Chanana, RK [1 ]
Dwivedi, R [1 ]
Srivastava, SK [1 ]
机构：
[1] BANARAS HINDU UNIV,INST TECHNOL,DEPT ELECT ENGN,MICROELECTR RES CTR,VARANASI 221005,UTTAR PRADESH,INDIA
来源：
SEMICONDUCTOR DEVICES | 1996年 / 2733卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：650 / 652
页数：3
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