Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers

被引：0

作者：

Wetzel, C

Haller, EE

Amano, H

Akasaki, I

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] MEIJO UNIV,DEPT ELECT & ELECTR ENGN,NAGOYA,AICHI,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 18期

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Infrared reflection spectroscopy is applied to state-of-the-art thin film heterostructures of group-III nitrides on sapphire and Si substrates. The individual layers of GaN and AlGaN and the AIN buffer layer are identified by their phonon frequencies. Under non-perpendicular incidence of the light, A(1)(LO) phonon modes are observed in the wurtzite system. The presence of the very thin AIN buffer layer manifests itself in clear features of the AlN phonons. The A(1)(LO) phonon mode energy is determined in AlxGa1-xN for x approximate to 0.15. Raman spectra confirm our findings. (C) 1996 American Institute of Physics.

引用

页码：2547 / 2549

页数：3

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