Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing

被引：9

作者：

Shimizu, Jun'ichi ^{[1
]}

Ohashi, Takumi ^{[1
]}

Matsuura, Kentaro ^{[1
]}

Muneta, Iriya ^{[1
]}

Kakushima, Kuniyuki ^{[1
]}

Tsutsui, Kazuo ^{[1
]}

Ikarashi, Nobuyuki ^{[2
]}

Wakabayashi, Hitoshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan

[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

关键词：

Transition metal di-chalcogenide; TMDC; molybdenum disulfide (MoS2); UHV RF sputtering; H2S annealing; ATOMIC LAYER DEPOSITION; THIN-FILM; MONOLAYER; MOBILITY;

D O I：

10.1109/JEDS.2018.2854633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-carrier density and high-crystallinity molybdenum disulfide (MoS2) films were fabricated by low-temperature and clean process based on a UHV RF sputtering system. This paper focuses on improving crystallinity and reducing the number of sulfur defects of sputtered-MoS2 film. We have fabricated MoS2 films at lower than 400 degrees C using the sputtering and H2S post-deposition annealing processes. Consequently, MoS2 films with high crystallinity and appropriate S/Mo ratio were obtained. Eventually, a low carrier density of 3.5 x 10(17) cm(-3) and the Hall-effect mobility of 12 cm(2)V(-1)s(-1) were achieved.

引用

页码：2 / 6

页数：5

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