Tunneling characteristics of a double-barrier magnetic junction

被引：5
|
作者：
Useinov, N. Kh [1 ]
机构：
[1] Kazan Volga Reg Fed Univ, Kazan 420008, Tatarstan, Russia
来源：
PHYSICS OF THE SOLID STATE | 2013年 / 55卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
MAGNETORESISTANCE; DIODE; DEPENDENCE; VOLTAGE;
D O I：
10.1134/S1063783413030281
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The spin-polarized current through a planar double-barrier magnetic tunnel junction has been calculated using the quasi-classical model. The coefficients of electron transmission through the barriers have been calculated in terms of the quantum theory. The dependences of the transmission coefficients, spinpolarized currents, and tunneling magnetoresistance on the applied voltage under resonant conditions have been shown. Under non-resonant conditions, the tunneling magnetoresistance has been compared with the experimental data.
引用
收藏
页码：659 / 667
页数：9
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